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| LPT16ED 30 GHz SiGe Bipolar Transistor Final Applications Low phase noise oscillators up to 16 GHz VCO's, DRO's and YIG oscillators Point-to-point radios Satellite communications Fiber optics, OC-192 and OC-768 Local Multipoint Distribution Systems, LMDS Product Description The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz. The transistor exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appropriate external passive components. The silicon germanium technology used in this device provides outstanding high-frequency performance combined with high thermal conductivity and superior reliability under harsh operating and storage conditions. A complete mechanical description of the transistor is available under SiGe Semiconductor Document 07MS001. Features Low 1/f noise: -142 dBc/Hz at 100 Hz offset Phase noise: -167 dBc/Hz at 100 kHz offset Output power up to +13 dBm Operation down to 1 volt, 2 mA Gold bump pads for wire bond or flip chip (for direct die attachment) Ordering Information Type LPT16ED Package Bare Die Remark Shipped in Waffle Pack Functional Block Diagram C B E 38-DST-01 Rev 2.3 Sept 5/02 1 of 5 LPT16ED 30 GHz SiGe Bipolar Transistor Final Absolute Maximum Ratings Operation in excess of any one of Absolute Maximum Ratings may result in permanent damage. This is a high performance RF device with ESD rating < 2keV. Handling and assembly of this device should be done at ESD protected workstations. Symbol VCBO VCEO VEBO IC IB PT Tj TSTG Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature -65 Min. Max. +13.0 +4.0 +1.5 80 2.0 250 +150 +150 Unit V V V mA mA mW C C DC Electrical Characteristics Conditions: TA = unless otherwise specified 25C Symbol VBE BVCEO BVCES BVEBO BVCBO VA ICBO IEBO hFE Parameter Base-emitter voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base breakdown voltage Early voltage Collector-base cutoff current Emitter-base cutoff current DC current gain Condition IC = 1A Open base Base-emitter shorted via 100k IE = 100A, open collector Open emitter IC = 10mA, VCE = 3V VCB = 5V and IE = 0 VEB = 1.5V and IC = 0 VCE = 2V, IC = 20mA 5 50 10 60 Min. 670 4.0 14 2.0 14 100 Typ. 687 4.5 15.0 2.3 15.0 200 Max. 700 5.0 16 2.6 16 300 100 15 150 Unit mV V V V V V pA A 38-DST-01 Rev 2.3 Sept 5/02 2 of 5 LPT16ED 30 GHz SiGe Bipolar Transistor Final AC Electrical Characteristics Symbol Parameter Note VCE = 1.5V, IC = 10mA, f = 16GHz VCE = 3.0V, IC = 20mA, f = 16GHz VCE = 1.5V, IC = 10mA, f = 16GHz VCE = 3.0V, IC = 20mA, f = 16GHz Min. 0.7 2.3 3.3 4.9 Typ. 1.0 2.6 3.6 5.2 Max. 1.3 2.9 4.2 5.6 Unit dB dB dB dB IS21I2 Insertion Power Gain (ZS = ZL = 50) MAG/ MSG Maximum Available Gain or Maximum Stable Gain Typical Performance Characteristics Please refer to application note (Document 07AN001). Typical Measurements @ 10 GHz, IC=5mA, VCE=1V Residual Phase Noise (dBc/Hz) Frequency (Hz) Typical Applications Information Series or parallel feedback oscillators at 5-16 GHz. (Please refer to application note, Document 07AN001). 38-DST-01 Rev 2.3 Sept 5/02 3 of 5 LPT16ED 30 GHz SiGe Bipolar Transistor Final Die and Pad Description X length Die edge Collector Emitter2 Y length Emitter1 Base 0,0 Dimensions are relative to the 0,0 cut die corner. Feature Die thickness X length Y length Pad diameter Pad pitch Pad/bump height Pad/bump co-planarity Pad Center Collector Emitter1 Base Emitter 2 Specification 10 mil +/- 1mil 15.3 mil +/- 1mil 14.5 mil +/- 1mil 2.9 mil +/- 0.1mil 6 mil +/- 0.1mil 1 mil +/- 0.05mil 0.2 mil Position (X mil, Y mil) +/- 0.7mil relative to the 0,0 cut die corner 5, 11 5, 5 11, 5 11, 11 Pads are circular. Pad center to pad centre Comments Please refer to Document 01-MS-001 for SiGe's die inspection criteria. For S-parameter data, please refer to SiGe Document 07SP001. 38-DST-01 Rev 2.3 Sept 5/02 4 of 5 LPT16ED 30 GHz SiGe Bipolar Transistor Final http://www.sige.com Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 2680 Queensview Drive Ottawa ON K2B 8J9 Canada sales@sige.com San Diego Phone: +1 858 668 3541 Fax: +1 858 668 3546 Hong Kong Phone: +1 852 9177 1917 United Kingdom South Building, Walden Court Parsonage Lane, Bishop's Stortford Hertfordshire CM23 5DB Phone: +44 1279 464 200 Fax: +44 1279 464 201 Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Final The datasheet contains information from the final product specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an "as is" basis. SiGe Semiconductor Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc. RangerCharger , StreamCharger , PointCharger , and LightCharger Copyright 2002 SiGe Semiconductor All Rights Reserved TM TM TM TM are trademarks owned by SiGe Semiconductor Inc. 38-DST-01 Rev 2.3 Sept 5/02 5 of 5 |
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